Frictional drag between closely spaced two-dimensional electron gases

H  Rubel; E H  Linfield; N P R  Hill; J T  Nicholls; D A  Ritchie; K M  Brown; M  Pepper; G A C  Jones

Frictional drag between closely spaced two-dimensional electron gases

H Rubel, E H Linfield, N P R Hill, J T Nicholls, D A Ritchie, K M Brown, M Pepper, G A C Jones

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	134-137
Number of pages	4
Journal	Surface science
Volume	362
Issue number	1-3
Publication status	Published - 1996

Keywords

electrical transport
electrical transport measurements
gallium arsenide
ion implantation
molecular beam epitaxy
quantum wells
semiconductor-semiconductor heterostructures
semiconductor-semiconductor interfaces
ION-BEAM LITHOGRAPHY
BALLISTIC PHONONS
INVERSION LAYER
PARALLEL
FABRICATION
SCATTERING
ABSORPTION
COULOMB
SYSTEMS

Cite this

@article{d2ec7b73aaff4dd8a22ace7f873a6a88,

title = "Frictional drag between closely spaced two-dimensional electron gases",

keywords = "electrical transport, electrical transport measurements, gallium arsenide, ion implantation, molecular beam epitaxy, quantum wells, semiconductor-semiconductor heterostructures, semiconductor-semiconductor interfaces, ION-BEAM LITHOGRAPHY, BALLISTIC PHONONS, INVERSION LAYER, PARALLEL, FABRICATION, SCATTERING, ABSORPTION, COULOMB, SYSTEMS",

author = "H Rubel and Linfield, {E H} and Hill, {N P R} and Nicholls, {J T} and Ritchie, {D A} and Brown, {K M} and M Pepper and Jones, {G A C}",

year = "1996",

language = "English",

volume = "362",

pages = "134--137",

journal = "Surface science",

issn = "0039-6028",

publisher = "Elsevier",

number = "1-3",

}

TY - JOUR

T1 - Frictional drag between closely spaced two-dimensional electron gases

AU - Rubel, H

AU - Linfield, E H

AU - Hill, N P R

AU - Nicholls, J T

AU - Ritchie, D A

AU - Brown, K M

AU - Pepper, M

AU - Jones, G A C

PY - 1996

Y1 - 1996

KW - electrical transport

KW - electrical transport measurements

KW - gallium arsenide

KW - ion implantation

KW - molecular beam epitaxy

KW - quantum wells

KW - semiconductor-semiconductor heterostructures

KW - semiconductor-semiconductor interfaces

KW - ION-BEAM LITHOGRAPHY

KW - BALLISTIC PHONONS

KW - INVERSION LAYER

KW - PARALLEL

KW - FABRICATION

KW - SCATTERING

KW - ABSORPTION

KW - COULOMB

KW - SYSTEMS

M3 - Article

SN - 0039-6028

VL - 362

SP - 134

EP - 137

JO - Surface science

JF - Surface science

IS - 1-3

ER -