Field effect transistor based on a bi-crystal grain boundary Josephson junction. / Ivanov, Z. G.; Stepantsov, E. A.; Tzalenchuk, Alexander; Shekhter, R. I.; Claeson, T.

In: IEEE transactions on applied superconductivity, Vol. 3, No. 1, 1993, p. 2925.

Research output: Contribution to journalArticlepeer-review

Published

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Field effect transistor based on a bi-crystal grain boundary Josephson junction. / Ivanov, Z. G.; Stepantsov, E. A.; Tzalenchuk, Alexander; Shekhter, R. I.; Claeson, T.

In: IEEE transactions on applied superconductivity, Vol. 3, No. 1, 1993, p. 2925.

Research output: Contribution to journalArticlepeer-review

Harvard

Ivanov, ZG, Stepantsov, EA, Tzalenchuk, A, Shekhter, RI & Claeson, T 1993, 'Field effect transistor based on a bi-crystal grain boundary Josephson junction', IEEE transactions on applied superconductivity, vol. 3, no. 1, pp. 2925.

APA

Ivanov, Z. G., Stepantsov, E. A., Tzalenchuk, A., Shekhter, R. I., & Claeson, T. (1993). Field effect transistor based on a bi-crystal grain boundary Josephson junction. IEEE transactions on applied superconductivity, 3(1), 2925.

Vancouver

Ivanov ZG, Stepantsov EA, Tzalenchuk A, Shekhter RI, Claeson T. Field effect transistor based on a bi-crystal grain boundary Josephson junction. IEEE transactions on applied superconductivity. 1993;3(1):2925.

Author

Ivanov, Z. G. ; Stepantsov, E. A. ; Tzalenchuk, Alexander ; Shekhter, R. I. ; Claeson, T. / Field effect transistor based on a bi-crystal grain boundary Josephson junction. In: IEEE transactions on applied superconductivity. 1993 ; Vol. 3, No. 1. pp. 2925.

BibTeX

@article{358bfb082bc44ce8ba93b1ae0239c4e8,
title = "Field effect transistor based on a bi-crystal grain boundary Josephson junction",
abstract = "The authors have developed a planar field effect device consisting of an artificial grain boundary junction in an Y 1Ba 2 Cu 3O x (YBCO) microbridge which was covered by a 300-nm amorphous SrTiO 3 layer and a 4-mum-wide gate electrode. The layers were grown on Y-ZrO 2 bicrystal. The current transport through the weak link, connecting the superconducting drain and source electrodes, was regulated by the voltage of the insulated gate. Devices with different misorientation angles, thetas, between the two halves of the bicrystal were studied. For 45deg nonsymmetric tilt grain boundaries, the authors observed a strong (more than 50%) enhancement of the supercurrent at positive gate voltage and almost no change, or a slight decrease, at negative voltage. A theoretical model of the device is discussed. At positive gate voltages of 0.5 V and 8 V about 40% and 70% enchancement of the device critical current, respectively, was obtained",
author = "Ivanov, {Z. G.} and Stepantsov, {E. A.} and Alexander Tzalenchuk and Shekhter, {R. I.} and T. Claeson",
year = "1993",
language = "English",
volume = "3",
pages = "2925",
journal = "IEEE transactions on applied superconductivity",
number = "1",

}

RIS

TY - JOUR

T1 - Field effect transistor based on a bi-crystal grain boundary Josephson junction

AU - Ivanov, Z. G.

AU - Stepantsov, E. A.

AU - Tzalenchuk, Alexander

AU - Shekhter, R. I.

AU - Claeson, T.

PY - 1993

Y1 - 1993

N2 - The authors have developed a planar field effect device consisting of an artificial grain boundary junction in an Y 1Ba 2 Cu 3O x (YBCO) microbridge which was covered by a 300-nm amorphous SrTiO 3 layer and a 4-mum-wide gate electrode. The layers were grown on Y-ZrO 2 bicrystal. The current transport through the weak link, connecting the superconducting drain and source electrodes, was regulated by the voltage of the insulated gate. Devices with different misorientation angles, thetas, between the two halves of the bicrystal were studied. For 45deg nonsymmetric tilt grain boundaries, the authors observed a strong (more than 50%) enhancement of the supercurrent at positive gate voltage and almost no change, or a slight decrease, at negative voltage. A theoretical model of the device is discussed. At positive gate voltages of 0.5 V and 8 V about 40% and 70% enchancement of the device critical current, respectively, was obtained

AB - The authors have developed a planar field effect device consisting of an artificial grain boundary junction in an Y 1Ba 2 Cu 3O x (YBCO) microbridge which was covered by a 300-nm amorphous SrTiO 3 layer and a 4-mum-wide gate electrode. The layers were grown on Y-ZrO 2 bicrystal. The current transport through the weak link, connecting the superconducting drain and source electrodes, was regulated by the voltage of the insulated gate. Devices with different misorientation angles, thetas, between the two halves of the bicrystal were studied. For 45deg nonsymmetric tilt grain boundaries, the authors observed a strong (more than 50%) enhancement of the supercurrent at positive gate voltage and almost no change, or a slight decrease, at negative voltage. A theoretical model of the device is discussed. At positive gate voltages of 0.5 V and 8 V about 40% and 70% enchancement of the device critical current, respectively, was obtained

M3 - Article

VL - 3

SP - 2925

JO - IEEE transactions on applied superconductivity

JF - IEEE transactions on applied superconductivity

IS - 1

ER -