Universal scaling of the anomalous Hall effect. / Liu, Wenqing.

In: Journal of Physics D: Applied Physics, Vol. 50, No. 15, 13.03.2017, p. 1-5.

Research output: Contribution to journalLetter

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Universal scaling of the anomalous Hall effect. / Liu, Wenqing.

In: Journal of Physics D: Applied Physics, Vol. 50, No. 15, 13.03.2017, p. 1-5.

Research output: Contribution to journalLetter

Harvard

Liu, W 2017, 'Universal scaling of the anomalous Hall effect', Journal of Physics D: Applied Physics, vol. 50, no. 15, pp. 1-5. https://doi.org/10.1088/1361-6463/aa5b1c

APA

Liu, W. (2017). Universal scaling of the anomalous Hall effect. Journal of Physics D: Applied Physics, 50(15), 1-5. https://doi.org/10.1088/1361-6463/aa5b1c

Vancouver

Liu W. Universal scaling of the anomalous Hall effect. Journal of Physics D: Applied Physics. 2017 Mar 13;50(15):1-5. https://doi.org/10.1088/1361-6463/aa5b1c

Author

Liu, Wenqing. / Universal scaling of the anomalous Hall effect. In: Journal of Physics D: Applied Physics. 2017 ; Vol. 50, No. 15. pp. 1-5.

BibTeX

@article{3239de6bc02f45f1a7cd7aa354d49422,
title = "Universal scaling of the anomalous Hall effect",
abstract = "We have undertaken a detailed study of the magneto-transport properties of ultra-thin Fe films epitaxially grown on GaAs (1 0 0). A metal–semiconductor transition has been observed with a critical thickness of 1.25 nm, which was thought to be related to the thermally activated tunneling between metallic clusters. By fitting ${{\rho}_{\text{AH}}}$ versus $\rho _{xx}^{2}$ with the TYJ equation (Tian et al 2009 Phys. Rev. Lett. 103 087206), we found that the magnetization is negligible for the scaling of the anomalous Hall effect in ultra-thin Fe films. Furthermore, the intrinsic term, which is acquired by the linear fitting of ${{\rho}_{\text{AH}}}$ versus $\rho _{xx}^{2}$ , shows an obvious decrease when the film thickness drops below 1.25 nm, which was thought to be related to the fading of the Berry curvature in the ultra-thin film limit.",
author = "Wenqing Liu",
year = "2017",
month = "3",
day = "13",
doi = "10.1088/1361-6463/aa5b1c",
language = "English",
volume = "50",
pages = "1--5",
journal = "Journal of Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd.",
number = "15",

}

RIS

TY - JOUR

T1 - Universal scaling of the anomalous Hall effect

AU - Liu, Wenqing

PY - 2017/3/13

Y1 - 2017/3/13

N2 - We have undertaken a detailed study of the magneto-transport properties of ultra-thin Fe films epitaxially grown on GaAs (1 0 0). A metal–semiconductor transition has been observed with a critical thickness of 1.25 nm, which was thought to be related to the thermally activated tunneling between metallic clusters. By fitting ${{\rho}_{\text{AH}}}$ versus $\rho _{xx}^{2}$ with the TYJ equation (Tian et al 2009 Phys. Rev. Lett. 103 087206), we found that the magnetization is negligible for the scaling of the anomalous Hall effect in ultra-thin Fe films. Furthermore, the intrinsic term, which is acquired by the linear fitting of ${{\rho}_{\text{AH}}}$ versus $\rho _{xx}^{2}$ , shows an obvious decrease when the film thickness drops below 1.25 nm, which was thought to be related to the fading of the Berry curvature in the ultra-thin film limit.

AB - We have undertaken a detailed study of the magneto-transport properties of ultra-thin Fe films epitaxially grown on GaAs (1 0 0). A metal–semiconductor transition has been observed with a critical thickness of 1.25 nm, which was thought to be related to the thermally activated tunneling between metallic clusters. By fitting ${{\rho}_{\text{AH}}}$ versus $\rho _{xx}^{2}$ with the TYJ equation (Tian et al 2009 Phys. Rev. Lett. 103 087206), we found that the magnetization is negligible for the scaling of the anomalous Hall effect in ultra-thin Fe films. Furthermore, the intrinsic term, which is acquired by the linear fitting of ${{\rho}_{\text{AH}}}$ versus $\rho _{xx}^{2}$ , shows an obvious decrease when the film thickness drops below 1.25 nm, which was thought to be related to the fading of the Berry curvature in the ultra-thin film limit.

U2 - 10.1088/1361-6463/aa5b1c

DO - 10.1088/1361-6463/aa5b1c

M3 - Letter

VL - 50

SP - 1

EP - 5

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 0022-3727

IS - 15

ER -