Small epitaxial graphene devices for magnetosensing applications. / Panchal, Vishal; Cedergren, K; Yakimova, R; Tzalenchuk, A; Kubatkin, S; Kazakova, O.

In: Journal of Applied Physics, Vol. 111, No. 07E509, 08.03.2012, p. 07E509.

Research output: Contribution to journalArticlepeer-review





Hall sensors with the width range from 0.5 to 20.0 μm have been fabricated out of a monolayer graphene epitaxially grown on SiC. The sensors have been studied at room temperature using transport and noise spectrum measurements. The minimum detectable field of a typical 10-μm graphene sensor is ≈2.5 μT/√Hz, making them comparable with state of the art semiconductor devices of the same size and carrier concentration and superior to devices made of CVD graphene. Relatively high resistance significantly restricts performance of the smallest 500-nm devices. Carrier mobility is strongly size dependent, signifying importance of both intrinsic and extrinsic factors in the optimization of the device performance.
Original languageEnglish
Pages (from-to)07E509
Number of pages3
JournalJournal of Applied Physics
Issue number07E509
Publication statusPublished - 8 Mar 2012
This open access research output is licenced under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported License.

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