SINGLE-ELECTRON TUNNELING AND COULOMB CHARGING EFFECTS IN ULTRASMALL DOUBLE-BARRIER HETEROSTRUCTURES. / TEWORDT, M ; LAW, V J ; NICHOLLS, J T ; MARTINMORENO, L ; RITCHIE, D A ; KELLY, M J ; PEPPER, M ; FROST, J E F ; NEWBURY, R ; JONES, G A .

In: Solid-State electronics, Vol. 37, No. 4-6, 1994, p. 793-799.

Research output: Contribution to journalArticlepeer-review

Published

Standard

SINGLE-ELECTRON TUNNELING AND COULOMB CHARGING EFFECTS IN ULTRASMALL DOUBLE-BARRIER HETEROSTRUCTURES. / TEWORDT, M ; LAW, V J ; NICHOLLS, J T ; MARTINMORENO, L ; RITCHIE, D A ; KELLY, M J ; PEPPER, M ; FROST, J E F ; NEWBURY, R ; JONES, G A .

In: Solid-State electronics, Vol. 37, No. 4-6, 1994, p. 793-799.

Research output: Contribution to journalArticlepeer-review

Harvard

TEWORDT, M, LAW, VJ, NICHOLLS, JT, MARTINMORENO, L, RITCHIE, DA, KELLY, MJ, PEPPER, M, FROST, JEF, NEWBURY, R & JONES, GA 1994, 'SINGLE-ELECTRON TUNNELING AND COULOMB CHARGING EFFECTS IN ULTRASMALL DOUBLE-BARRIER HETEROSTRUCTURES', Solid-State electronics, vol. 37, no. 4-6, pp. 793-799.

APA

TEWORDT, M., LAW, V. J., NICHOLLS, J. T., MARTINMORENO, L., RITCHIE, D. A., KELLY, M. J., PEPPER, M., FROST, J. E. F., NEWBURY, R., & JONES, G. A. (1994). SINGLE-ELECTRON TUNNELING AND COULOMB CHARGING EFFECTS IN ULTRASMALL DOUBLE-BARRIER HETEROSTRUCTURES. Solid-State electronics, 37(4-6), 793-799.

Vancouver

TEWORDT M, LAW VJ, NICHOLLS JT, MARTINMORENO L, RITCHIE DA, KELLY MJ et al. SINGLE-ELECTRON TUNNELING AND COULOMB CHARGING EFFECTS IN ULTRASMALL DOUBLE-BARRIER HETEROSTRUCTURES. Solid-State electronics. 1994;37(4-6):793-799.

Author

TEWORDT, M ; LAW, V J ; NICHOLLS, J T ; MARTINMORENO, L ; RITCHIE, D A ; KELLY, M J ; PEPPER, M ; FROST, J E F ; NEWBURY, R ; JONES, G A . / SINGLE-ELECTRON TUNNELING AND COULOMB CHARGING EFFECTS IN ULTRASMALL DOUBLE-BARRIER HETEROSTRUCTURES. In: Solid-State electronics. 1994 ; Vol. 37, No. 4-6. pp. 793-799.

BibTeX

@article{6928503b7c5645bda7ca96cce409d15e,
title = "SINGLE-ELECTRON TUNNELING AND COULOMB CHARGING EFFECTS IN ULTRASMALL DOUBLE-BARRIER HETEROSTRUCTURES",
keywords = "QUANTUM-DOT SPECTRA, TRANSPORT SPECTROSCOPY, ZEEMAN BIFURCATION, CONDUCTANCE, STATES, OSCILLATIONS, PARTICLES, BLOCKADE, DEVICES, SYSTEM",
author = "M TEWORDT and LAW, {V J} and NICHOLLS, {J T} and L MARTINMORENO and RITCHIE, {D A} and KELLY, {M J} and M PEPPER and FROST, {J E F} and R NEWBURY and JONES, {G A}",
year = "1994",
language = "English",
volume = "37",
pages = "793--799",
journal = "Solid-State electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "4-6",

}

RIS

TY - JOUR

T1 - SINGLE-ELECTRON TUNNELING AND COULOMB CHARGING EFFECTS IN ULTRASMALL DOUBLE-BARRIER HETEROSTRUCTURES

AU - TEWORDT, M

AU - LAW, V J

AU - NICHOLLS, J T

AU - MARTINMORENO, L

AU - RITCHIE, D A

AU - KELLY, M J

AU - PEPPER, M

AU - FROST, J E F

AU - NEWBURY, R

AU - JONES, G A

PY - 1994

Y1 - 1994

KW - QUANTUM-DOT SPECTRA

KW - TRANSPORT SPECTROSCOPY

KW - ZEEMAN BIFURCATION

KW - CONDUCTANCE

KW - STATES

KW - OSCILLATIONS

KW - PARTICLES

KW - BLOCKADE

KW - DEVICES

KW - SYSTEM

M3 - Article

VL - 37

SP - 793

EP - 799

JO - Solid-State electronics

JF - Solid-State electronics

SN - 0038-1101

IS - 4-6

ER -