SINGLE-ELECTRON TUNNELING AND COULOMB CHARGING EFFECTS IN ULTRASMALL DOUBLE-BARRIER HETEROSTRUCTURES. / TEWORDT, M ; LAW, V J ; NICHOLLS, J T ; MARTINMORENO, L ; RITCHIE, D A ; KELLY, M J ; PEPPER, M ; FROST, J E F ; NEWBURY, R ; JONES, G A .

In: Solid-State electronics, Vol. 37, No. 4-6, 1994, p. 793-799.

Research output: Contribution to journalArticle

Published
  • M TEWORDT
  • V J LAW
  • J T NICHOLLS
  • L MARTINMORENO
  • D A RITCHIE
  • M J KELLY
  • M PEPPER
  • J E F FROST
  • R NEWBURY
  • G A JONES
Original languageEnglish
Pages (from-to)793-799
Number of pages7
JournalSolid-State electronics
Volume37
Issue number4-6
Publication statusPublished - 1994

ID: 3093861