Probing the Buried Magnetic Interfaces. / Liu, Wenqing; Zhou, Qionghua; Chen, Qian; Niu, Daxin; Zhou, Yan; Xu, Yongbing; Zhang, Rong; Wang, Jinlan; van der Laan, Gerrit .

In: ACS Applied Materials & Interfaces, Vol. 8, 18.02.2016, p. 5752–5757.

Research output: Contribution to journalLetter

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Probing the Buried Magnetic Interfaces. / Liu, Wenqing; Zhou, Qionghua; Chen, Qian; Niu, Daxin; Zhou, Yan; Xu, Yongbing; Zhang, Rong; Wang, Jinlan; van der Laan, Gerrit .

In: ACS Applied Materials & Interfaces, Vol. 8, 18.02.2016, p. 5752–5757.

Research output: Contribution to journalLetter

Harvard

Liu, W, Zhou, Q, Chen, Q, Niu, D, Zhou, Y, Xu, Y, Zhang, R, Wang, J & van der Laan, G 2016, 'Probing the Buried Magnetic Interfaces', ACS Applied Materials & Interfaces, vol. 8, pp. 5752–5757. https://doi.org/10.1021/acsami.5b11438

APA

Liu, W., Zhou, Q., Chen, Q., Niu, D., Zhou, Y., Xu, Y., Zhang, R., Wang, J., & van der Laan, G. (2016). Probing the Buried Magnetic Interfaces. ACS Applied Materials & Interfaces, 8, 5752–5757. https://doi.org/10.1021/acsami.5b11438

Vancouver

Liu W, Zhou Q, Chen Q, Niu D, Zhou Y, Xu Y et al. Probing the Buried Magnetic Interfaces. ACS Applied Materials & Interfaces. 2016 Feb 18;8:5752–5757. https://doi.org/10.1021/acsami.5b11438

Author

Liu, Wenqing ; Zhou, Qionghua ; Chen, Qian ; Niu, Daxin ; Zhou, Yan ; Xu, Yongbing ; Zhang, Rong ; Wang, Jinlan ; van der Laan, Gerrit . / Probing the Buried Magnetic Interfaces. In: ACS Applied Materials & Interfaces. 2016 ; Vol. 8. pp. 5752–5757.

BibTeX

@article{513ada36dea54a37a614ed06f7452fda,
title = "Probing the Buried Magnetic Interfaces",
abstract = "Understanding magnetism in ferromagnetic metal/semiconductor (FM/SC) heterostructures is important to the development of the new-generation spin field-effect transistor. Here, we report an element-specific X-ray magnetic circular dichroism study of the interfacial magnetic moments for two FM/SC model systems, namely, Co/GaAs and Ni/GaAs, which was enabled using a specially designed FM1/FM2/SC superstructure. We observed a robust room temperature magnetization of the interfacial Co, while that of the interfacial Ni was strongly diminished down to 5 K because of hybridization of the Ni d(eg) and GaAs sp3 states. The validity of the selected method was confirmed by first-principles calculations, showing only small deviations (<0.02 and <0.07 μB/atom for Co/GaAs and Ni/GaAs, respectively) compared to the real FM/SC interfaces. Our work proved that the electronic structure and magnetic ground state of the interfacial FM2 is not altered when the topmost FM2 is replaced by FM1 and that this model is applicable generally for probing the buried magnetic interfaces in the advanced spintronic materials.",
author = "Wenqing Liu and Qionghua Zhou and Qian Chen and Daxin Niu and Yan Zhou and Yongbing Xu and Rong Zhang and Jinlan Wang and {van der Laan}, Gerrit",
year = "2016",
month = feb,
day = "18",
doi = "10.1021/acsami.5b11438",
language = "English",
volume = "8",
pages = "5752–5757",
journal = "ACS Applied Materials & Interfaces",

}

RIS

TY - JOUR

T1 - Probing the Buried Magnetic Interfaces

AU - Liu, Wenqing

AU - Zhou, Qionghua

AU - Chen, Qian

AU - Niu, Daxin

AU - Zhou, Yan

AU - Xu, Yongbing

AU - Zhang, Rong

AU - Wang, Jinlan

AU - van der Laan, Gerrit

PY - 2016/2/18

Y1 - 2016/2/18

N2 - Understanding magnetism in ferromagnetic metal/semiconductor (FM/SC) heterostructures is important to the development of the new-generation spin field-effect transistor. Here, we report an element-specific X-ray magnetic circular dichroism study of the interfacial magnetic moments for two FM/SC model systems, namely, Co/GaAs and Ni/GaAs, which was enabled using a specially designed FM1/FM2/SC superstructure. We observed a robust room temperature magnetization of the interfacial Co, while that of the interfacial Ni was strongly diminished down to 5 K because of hybridization of the Ni d(eg) and GaAs sp3 states. The validity of the selected method was confirmed by first-principles calculations, showing only small deviations (<0.02 and <0.07 μB/atom for Co/GaAs and Ni/GaAs, respectively) compared to the real FM/SC interfaces. Our work proved that the electronic structure and magnetic ground state of the interfacial FM2 is not altered when the topmost FM2 is replaced by FM1 and that this model is applicable generally for probing the buried magnetic interfaces in the advanced spintronic materials.

AB - Understanding magnetism in ferromagnetic metal/semiconductor (FM/SC) heterostructures is important to the development of the new-generation spin field-effect transistor. Here, we report an element-specific X-ray magnetic circular dichroism study of the interfacial magnetic moments for two FM/SC model systems, namely, Co/GaAs and Ni/GaAs, which was enabled using a specially designed FM1/FM2/SC superstructure. We observed a robust room temperature magnetization of the interfacial Co, while that of the interfacial Ni was strongly diminished down to 5 K because of hybridization of the Ni d(eg) and GaAs sp3 states. The validity of the selected method was confirmed by first-principles calculations, showing only small deviations (<0.02 and <0.07 μB/atom for Co/GaAs and Ni/GaAs, respectively) compared to the real FM/SC interfaces. Our work proved that the electronic structure and magnetic ground state of the interfacial FM2 is not altered when the topmost FM2 is replaced by FM1 and that this model is applicable generally for probing the buried magnetic interfaces in the advanced spintronic materials.

U2 - 10.1021/acsami.5b11438

DO - 10.1021/acsami.5b11438

M3 - Letter

VL - 8

SP - 5752

EP - 5757

JO - ACS Applied Materials & Interfaces

JF - ACS Applied Materials & Interfaces

ER -