Modifying the electronic properties of GaAs/AlAs superlattices with low-density nitrogen doping. / Spasov, Spas; Allison, G.; Patane, A.; Eaves, L.; Hopkinson, M.; Airey, R.

In: Journal of Applied Physics, Vol. 100, No. 6, 2006.

Research output: Contribution to journalArticlepeer-review

Published

Standard

Modifying the electronic properties of GaAs/AlAs superlattices with low-density nitrogen doping. / Spasov, Spas; Allison, G.; Patane, A.; Eaves, L.; Hopkinson, M.; Airey, R.

In: Journal of Applied Physics, Vol. 100, No. 6, 2006.

Research output: Contribution to journalArticlepeer-review

Harvard

Spasov, S, Allison, G, Patane, A, Eaves, L, Hopkinson, M & Airey, R 2006, 'Modifying the electronic properties of GaAs/AlAs superlattices with low-density nitrogen doping', Journal of Applied Physics, vol. 100, no. 6. https://doi.org/10.1063/1.2353793

APA

Spasov, S., Allison, G., Patane, A., Eaves, L., Hopkinson, M., & Airey, R. (2006). Modifying the electronic properties of GaAs/AlAs superlattices with low-density nitrogen doping. Journal of Applied Physics, 100(6). https://doi.org/10.1063/1.2353793

Vancouver

Spasov S, Allison G, Patane A, Eaves L, Hopkinson M, Airey R. Modifying the electronic properties of GaAs/AlAs superlattices with low-density nitrogen doping. Journal of Applied Physics. 2006;100(6). https://doi.org/10.1063/1.2353793

Author

Spasov, Spas ; Allison, G. ; Patane, A. ; Eaves, L. ; Hopkinson, M. ; Airey, R. / Modifying the electronic properties of GaAs/AlAs superlattices with low-density nitrogen doping. In: Journal of Applied Physics. 2006 ; Vol. 100, No. 6.

BibTeX

@article{b1f9fcd9fc51470f89abb594730c5021,
title = "Modifying the electronic properties of GaAs/AlAs superlattices with low-density nitrogen doping",
author = "Spas Spasov and G. Allison and A. Patane and L. Eaves and M. Hopkinson and R. Airey",
note = "Times Cited: 2 Hopkinson, Mark/H-8239-2012 2",
year = "2006",
doi = "10.1063/1.2353793",
language = "Undefined/Unknown",
volume = "100",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

RIS

TY - JOUR

T1 - Modifying the electronic properties of GaAs/AlAs superlattices with low-density nitrogen doping

AU - Spasov, Spas

AU - Allison, G.

AU - Patane, A.

AU - Eaves, L.

AU - Hopkinson, M.

AU - Airey, R.

N1 - Times Cited: 2 Hopkinson, Mark/H-8239-2012 2

PY - 2006

Y1 - 2006

U2 - 10.1063/1.2353793

DO - 10.1063/1.2353793

M3 - Article

VL - 100

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 6

ER -