Interface Magnetic and Electric Properties of CoFeB/InAs Heterostructures. / Liu, Wenqing.

In: IEEE Transactions on Magnetics, Vol. 53, No. 1, 05.10.2016, p. 1-4.

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Abstract

Amorphous magnetic CoFeB ultrathin films have been synthesized on the narrow band gap semiconductor InAs(100) surface, and the nature of the interface magnetic anisotropy and electrical contact has been studied. Angle dependent hysteresis loops reveal that the films have an in-plane uniaxial magnetic anisotropy with the easy axis along the InAs [0-11] crystal direction. The uniaxial magnetic anisotropy was found to be dependent on the annealing temperatures of the substrates, which indicates the significant role of the Fe, Co-As bonding at the interface related to the surface condition of the InAs(100). I-V measurements show an ohmic contact interface between the CoFeB films and the InAs substrates, which is not affected by the surface condition of the InAs (100).
Original languageEnglish
Pages (from-to)1-4
Number of pages4
JournalIEEE Transactions on Magnetics
Volume53
Issue number1
DOIs
Publication statusPublished - 5 Oct 2016
This open access research output is licenced under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported License.

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