Influence of grain-boundary defects on electric transport in CeRhSn with a non-Fermi-liquid ground state. / Slebarski, Andrzej; Szot, Krzysztof; Gamza, Monika; Penkalla, H. J. ; Breuer, U. .

In: Physical Review B, Vol. 72, No. 8, 085443, 18.08.2005, p. 085443-1 085443-6.

Research output: Contribution to journalArticlepeer-review

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  • Andrzej Slebarski
  • Krzysztof Szot
  • Monika Gamza
  • H. J. Penkalla
  • U. Breuer

Abstract

Measurements by atomic force microscopy reported for a polycrystalline CeRhSn sample show nanometer-sized grains consisting of crystalline components. The grains are separated by a grain boundary. The high-resolution electron microscopy and secondary-ion mass spectrometry were used to determine homogeneity of the grains and the grain boundary. The grains are homogeneous up to about 60% of the major phase, with slightly off-stoichiometric phases constituting the balance, whereas the volume fractions of intercrystalline components are strongly inhomogeneous and off stoichiometric. We argue that there is possibly a ballistic transport of electrons through an interface between the grains, which strongly modifies the resistivity of the CeRhSn stoichiometric grains, which is non-Fermi-liquid in character.
Original languageEnglish
Article number085443
Pages (from-to)085443-1 085443-6
Number of pages6
JournalPhysical Review B
Volume72
Issue number8
Publication statusPublished - 18 Aug 2005

ID: 19059252