High-Mobility Sm-Doped Bi2Se3 Ferromagnetic Topological Insulators and Robust Exchange Coupling. / Chen, Taishi; Liu, Wenqing; Zheng, Fubao; Gao, Ming; Pan, Xingchen; van der Laan, Gerrit ; Wang, Xuefeng; Zhang, Qinfang; Song, Fengqi; Wang, Baigeng; Wang, Baolin; Xu, Yongbing; Wang, Guanghou; Zhang, Rong.

In: Advanced Materials, Vol. 27, No. 33, 02.09.2015, p. 4823–4829.

Research output: Contribution to journalLetter

Published

Standard

High-Mobility Sm-Doped Bi2Se3 Ferromagnetic Topological Insulators and Robust Exchange Coupling. / Chen, Taishi; Liu, Wenqing; Zheng, Fubao; Gao, Ming; Pan, Xingchen; van der Laan, Gerrit ; Wang, Xuefeng; Zhang, Qinfang; Song, Fengqi; Wang, Baigeng; Wang, Baolin; Xu, Yongbing; Wang, Guanghou; Zhang, Rong.

In: Advanced Materials, Vol. 27, No. 33, 02.09.2015, p. 4823–4829.

Research output: Contribution to journalLetter

Harvard

Chen, T, Liu, W, Zheng, F, Gao, M, Pan, X, van der Laan, G, Wang, X, Zhang, Q, Song, F, Wang, B, Wang, B, Xu, Y, Wang, G & Zhang, R 2015, 'High-Mobility Sm-Doped Bi2Se3 Ferromagnetic Topological Insulators and Robust Exchange Coupling', Advanced Materials, vol. 27, no. 33, pp. 4823–4829. https://doi.org/10.1002/adma.201501254

APA

Chen, T., Liu, W., Zheng, F., Gao, M., Pan, X., van der Laan, G., ... Zhang, R. (2015). High-Mobility Sm-Doped Bi2Se3 Ferromagnetic Topological Insulators and Robust Exchange Coupling. Advanced Materials, 27(33), 4823–4829. https://doi.org/10.1002/adma.201501254

Vancouver

Chen T, Liu W, Zheng F, Gao M, Pan X, van der Laan G et al. High-Mobility Sm-Doped Bi2Se3 Ferromagnetic Topological Insulators and Robust Exchange Coupling. Advanced Materials. 2015 Sep 2;27(33):4823–4829. https://doi.org/10.1002/adma.201501254

Author

Chen, Taishi ; Liu, Wenqing ; Zheng, Fubao ; Gao, Ming ; Pan, Xingchen ; van der Laan, Gerrit ; Wang, Xuefeng ; Zhang, Qinfang ; Song, Fengqi ; Wang, Baigeng ; Wang, Baolin ; Xu, Yongbing ; Wang, Guanghou ; Zhang, Rong. / High-Mobility Sm-Doped Bi2Se3 Ferromagnetic Topological Insulators and Robust Exchange Coupling. In: Advanced Materials. 2015 ; Vol. 27, No. 33. pp. 4823–4829.

BibTeX

@article{14ba857f1c934fbf92d89e9716388da2,
title = "High-Mobility Sm-Doped Bi2Se3 Ferromagnetic Topological Insulators and Robust Exchange Coupling",
abstract = "High-mobility (SmxBi1-x)2Se3 topological insulators (with x = 0.05) show a Curie temperature of about 52 K, and the carrier concentration and Fermi wave vector can be manipulated by intentional Te introduction with no significant influence on the Curie temperature. The origin of the ferromagnetism is attributed to the trivalent Sm dopant, as confirmed by X-ray magnetic circular dichroism and first-principles calculations. The carrier concentration is on the order of 1019 cm−3 and the mobility can reach about 7200 cm2 V−1 s−1 with pronounced Shubnikov–de Haas oscillations.",
author = "Taishi Chen and Wenqing Liu and Fubao Zheng and Ming Gao and Xingchen Pan and {van der Laan}, Gerrit and Xuefeng Wang and Qinfang Zhang and Fengqi Song and Baigeng Wang and Baolin Wang and Yongbing Xu and Guanghou Wang and Rong Zhang",
year = "2015",
month = "9",
day = "2",
doi = "10.1002/adma.201501254",
language = "English",
volume = "27",
pages = "4823–4829",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "33",

}

RIS

TY - JOUR

T1 - High-Mobility Sm-Doped Bi2Se3 Ferromagnetic Topological Insulators and Robust Exchange Coupling

AU - Chen, Taishi

AU - Liu, Wenqing

AU - Zheng, Fubao

AU - Gao, Ming

AU - Pan, Xingchen

AU - van der Laan, Gerrit

AU - Wang, Xuefeng

AU - Zhang, Qinfang

AU - Song, Fengqi

AU - Wang, Baigeng

AU - Wang, Baolin

AU - Xu, Yongbing

AU - Wang, Guanghou

AU - Zhang, Rong

PY - 2015/9/2

Y1 - 2015/9/2

N2 - High-mobility (SmxBi1-x)2Se3 topological insulators (with x = 0.05) show a Curie temperature of about 52 K, and the carrier concentration and Fermi wave vector can be manipulated by intentional Te introduction with no significant influence on the Curie temperature. The origin of the ferromagnetism is attributed to the trivalent Sm dopant, as confirmed by X-ray magnetic circular dichroism and first-principles calculations. The carrier concentration is on the order of 1019 cm−3 and the mobility can reach about 7200 cm2 V−1 s−1 with pronounced Shubnikov–de Haas oscillations.

AB - High-mobility (SmxBi1-x)2Se3 topological insulators (with x = 0.05) show a Curie temperature of about 52 K, and the carrier concentration and Fermi wave vector can be manipulated by intentional Te introduction with no significant influence on the Curie temperature. The origin of the ferromagnetism is attributed to the trivalent Sm dopant, as confirmed by X-ray magnetic circular dichroism and first-principles calculations. The carrier concentration is on the order of 1019 cm−3 and the mobility can reach about 7200 cm2 V−1 s−1 with pronounced Shubnikov–de Haas oscillations.

U2 - 10.1002/adma.201501254

DO - 10.1002/adma.201501254

M3 - Letter

VL - 27

SP - 4823

EP - 4829

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 33

ER -