Fabrication and Characterization of Fe-Doped In 2 O 3 Dilute Magnetic Semiconducting Nanowires. / Liu, Wenqing.

In: Chinese Physics Letters, Vol. 32, No. 3, 03.2015, p. 1-5.

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Abstract

Fe-doped In2O3 dilute magnetic semiconducting nanowires are fabricated on Au-deposited Si substrates by the chemical vapor deposition technique. It is confirmed by energy dispersive x-ray spectroscopy (EDS), x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy that Fe has been successfully doped into lattices of In2O3 nanowires. The EDS measurements reveal a large amount of oxygen vacancies existing in the Fe-doped In2O3 nanowires. The Fe dopant exists as a mixture of Fe2+ and Fe3+, as revealed by the XPS. The origin of room-temperature ferromagnetism in Fe-doped In2O3 nanowires is explained by the bound magnetic polaron model.
Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalChinese Physics Letters
Volume32
Issue number3
DOIs
Publication statusPublished - Mar 2015
This open access research output is licenced under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported License.

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