Enhancing Magnetic Ordering in Cr-doped Bi2Se3 using High-TC Ferrimagnetic Insulator - Research

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Enhancing Magnetic Ordering in Cr-doped Bi2Se3 using High-TC Ferrimagnetic Insulator. / Liu, Wenqing; He, Liang; Xu, Yongbing; Murata, koichi; Onbasli, Mehmet C. ; Lang, Murong; Maltby, nick; li, Shunpu; Wang, Xuefeng; Ross, Caroline; bencok, Peter; van der Laan, Gerrit ; Zhang, Rong; Wang, Kang.

In: Nano Letters, Vol. 15, 2015, p. 764–769.

Research output: Contribution to journal › Letter

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In: Nano Letters, Vol. 15, 2015, p. 764–769.

Research output: Contribution to journal › Letter

Harvard

Liu, W, He, L, Xu, Y, Murata, K, Onbasli, MC, Lang, M, Maltby, N, li, S, Wang, X, Ross, C, bencok, P, van der Laan, G, Zhang, R & Wang, K 2015, 'Enhancing Magnetic Ordering in Cr-doped Bi2Se3 using High-TC Ferrimagnetic Insulator', Nano Letters, vol. 15, pp. 764–769. https://doi.org/10.1021/nl504480g

APA

Liu, W., He, L., Xu, Y., Murata, K., Onbasli, M. C., Lang, M., Maltby, N., li, S., Wang, X., Ross, C., bencok, P., van der Laan, G., Zhang, R., & Wang, K. (2015). Enhancing Magnetic Ordering in Cr-doped Bi2Se3 using High-TC Ferrimagnetic Insulator. Nano Letters, 15, 764–769. https://doi.org/10.1021/nl504480g

Vancouver

Liu W, He L, Xu Y, Murata K, Onbasli MC, Lang M et al. Enhancing Magnetic Ordering in Cr-doped Bi2Se3 using High-TC Ferrimagnetic Insulator. Nano Letters. 2015;15:764–769. https://doi.org/10.1021/nl504480g

Author

Liu, Wenqing ; He, Liang ; Xu, Yongbing ; Murata, koichi ; Onbasli, Mehmet C. ; Lang, Murong ; Maltby, nick ; li, Shunpu ; Wang, Xuefeng ; Ross, Caroline ; bencok, Peter ; van der Laan, Gerrit ; Zhang, Rong ; Wang, Kang. / Enhancing Magnetic Ordering in Cr-doped Bi2Se3 using High-TC Ferrimagnetic Insulator. In: Nano Letters. 2015 ; Vol. 15. pp. 764–769.

BibTeX

@article{fd9755c441ca4c3eae10ce1a2ccc9976,

title = "Enhancing Magnetic Ordering in Cr-doped Bi2Se3 using High-TC Ferrimagnetic Insulator",

abstract = "We report a study of enhancing the magnetic ordering in a model magnetically doped topological insulator (TI), Bi2–xCrxSe3, via the proximity effect using a high-TC ferrimagnetic insulator Y3Fe5O12. The FMI provides the TI with a source of exchange interaction yet without removing the nontrivial surface state. By performing the elemental specific X-ray magnetic circular dichroism (XMCD) measurements, we have unequivocally observed an enhanced TC of 50 K in this magnetically doped TI/FMI heterostructure. We have also found a larger (6.6 nm at 30 K) but faster decreasing (by 80% from 30 to 50 K) penetration depth compared to that of diluted ferromagnetic semiconductors (DMSs), which could indicate a novel mechanism for the interaction between FMIs and the nontrivial TIs surface.",

author = "Wenqing Liu and Liang He and Yongbing Xu and koichi Murata and Onbasli, {Mehmet C.} and Murong Lang and nick Maltby and Shunpu li and Xuefeng Wang and Caroline Ross and Peter bencok and {van der Laan}, Gerrit and Rong Zhang and Kang Wang",

year = "2015",

doi = "10.1021/nl504480g",

language = "English",

volume = "15",

pages = "764–769",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

}

RIS

TY - JOUR

T1 - Enhancing Magnetic Ordering in Cr-doped Bi2Se3 using High-TC Ferrimagnetic Insulator

AU - Liu, Wenqing

AU - He, Liang

AU - Xu, Yongbing

AU - Murata, koichi

AU - Onbasli, Mehmet C.

AU - Lang, Murong

AU - Maltby, nick

AU - li, Shunpu

AU - Wang, Xuefeng

AU - Ross, Caroline

AU - bencok, Peter

AU - van der Laan, Gerrit

AU - Zhang, Rong

AU - Wang, Kang

PY - 2015

Y1 - 2015

N2 - We report a study of enhancing the magnetic ordering in a model magnetically doped topological insulator (TI), Bi2–xCrxSe3, via the proximity effect using a high-TC ferrimagnetic insulator Y3Fe5O12. The FMI provides the TI with a source of exchange interaction yet without removing the nontrivial surface state. By performing the elemental specific X-ray magnetic circular dichroism (XMCD) measurements, we have unequivocally observed an enhanced TC of 50 K in this magnetically doped TI/FMI heterostructure. We have also found a larger (6.6 nm at 30 K) but faster decreasing (by 80% from 30 to 50 K) penetration depth compared to that of diluted ferromagnetic semiconductors (DMSs), which could indicate a novel mechanism for the interaction between FMIs and the nontrivial TIs surface.

AB - We report a study of enhancing the magnetic ordering in a model magnetically doped topological insulator (TI), Bi2–xCrxSe3, via the proximity effect using a high-TC ferrimagnetic insulator Y3Fe5O12. The FMI provides the TI with a source of exchange interaction yet without removing the nontrivial surface state. By performing the elemental specific X-ray magnetic circular dichroism (XMCD) measurements, we have unequivocally observed an enhanced TC of 50 K in this magnetically doped TI/FMI heterostructure. We have also found a larger (6.6 nm at 30 K) but faster decreasing (by 80% from 30 to 50 K) penetration depth compared to that of diluted ferromagnetic semiconductors (DMSs), which could indicate a novel mechanism for the interaction between FMIs and the nontrivial TIs surface.

U2 - 10.1021/nl504480g

DO - 10.1021/nl504480g

M3 - Letter

VL - 15

SP - 764

EP - 769

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

ER -