Enhancing Magnetic Ordering in Cr-doped Bi2Se3 using High-TC Ferrimagnetic Insulator. / Liu, Wenqing; He, Liang; Xu, Yongbing; Murata, koichi; Onbasli, Mehmet C. ; Lang, Murong; Maltby, nick; li, Shunpu; Wang, Xuefeng; Ross, Caroline; bencok, Peter; van der Laan, Gerrit ; Zhang, Rong; Wang, Kang.

In: Nano Letters, Vol. 15, 2015, p. 764–769.

Research output: Contribution to journalLetter

Published
  • Wenqing Liu
  • Liang He
  • Yongbing Xu
  • koichi Murata
  • Mehmet C. Onbasli
  • Murong Lang
  • nick Maltby
  • Shunpu li
  • Xuefeng Wang
  • Caroline Ross
  • Peter bencok
  • Gerrit van der Laan
  • Rong Zhang
  • Kang Wang

Abstract

We report a study of enhancing the magnetic ordering in a model magnetically doped topological insulator (TI), Bi2–xCrxSe3, via the proximity effect using a high-TC ferrimagnetic insulator Y3Fe5O12. The FMI provides the TI with a source of exchange interaction yet without removing the nontrivial surface state. By performing the elemental specific X-ray magnetic circular dichroism (XMCD) measurements, we have unequivocally observed an enhanced TC of 50 K in this magnetically doped TI/FMI heterostructure. We have also found a larger (6.6 nm at 30 K) but faster decreasing (by 80% from 30 to 50 K) penetration depth compared to that of diluted ferromagnetic semiconductors (DMSs), which could indicate a novel mechanism for the interaction between FMIs and the nontrivial TIs surface.
Original languageEnglish
Pages (from-to)764–769
Number of pages6
JournalNano Letters
Volume15
Early online date22 Dec 2014
DOIs
Publication statusPublished - 2015
This open access research output is licenced under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported License.

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