Electrical properties of epitaxial tungsten films grown by laser ablation deposition. / Mikhailov, G M ; Chernykh, A V ; Petrashov, Victor.
In: Journal of Applied Physics, Vol. 80, No. 2, 15.07.1996, p. 948-951.Research output: Contribution to journal › Article › peer-review
Published
Standard
Electrical properties of epitaxial tungsten films grown by laser ablation deposition. / Mikhailov, G M ; Chernykh, A V ; Petrashov, Victor.
In: Journal of Applied Physics, Vol. 80, No. 2, 15.07.1996, p. 948-951.Research output: Contribution to journal › Article › peer-review
Harvard
Mikhailov, GM, Chernykh, AV & Petrashov, V 1996, 'Electrical properties of epitaxial tungsten films grown by laser ablation deposition', Journal of Applied Physics, vol. 80, no. 2, pp. 948-951.
APA
Mikhailov, G. M., Chernykh, A. V., & Petrashov, V. (1996). Electrical properties of epitaxial tungsten films grown by laser ablation deposition. Journal of Applied Physics, 80(2), 948-951.
Vancouver
Mikhailov GM, Chernykh AV, Petrashov V. Electrical properties of epitaxial tungsten films grown by laser ablation deposition. Journal of Applied Physics. 1996 Jul 15;80(2):948-951.
Author
BibTeX
@article{aaac975a45d04aa5bafa750b29eec4bb,
title = "Electrical properties of epitaxial tungsten films grown by laser ablation deposition",
author = "Mikhailov, {G M} and Chernykh, {A V} and Victor Petrashov",
year = "1996",
month = jul,
day = "15",
language = "English",
volume = "80",
pages = "948--951",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "2",
}
RIS
TY - JOUR
T1 - Electrical properties of epitaxial tungsten films grown by laser ablation deposition
AU - Mikhailov, G M
AU - Chernykh, A V
AU - Petrashov, Victor
PY - 1996/7/15
Y1 - 1996/7/15
M3 - Article
VL - 80
SP - 948
EP - 951
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 2
ER -