Controlling the carrier concentration of epitaxial graphene by ultraviolet illumination. / Eless, Viktoria; Pearce, Ruth ; Yakimova, Rositza .

In: Materials Science Forum, Vol. 778, 2014, p. 1137.

Research output: Contribution to journalArticle

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Abstract

Silicon carbide (SiC) is a well-known material for UV detection however the effect of UV illumination on the electron donation between the substrate, interfacial (or buffer layer) and graphene is not well understood. The effect of ultraviolet (UV) illumination on the carrier concentration of an epitaxial graphene Hall bar device is investigated by scanning Kelvin probe microscopy (SKPM) and transport measurements in ambient and vacuum conditions. Modulation of the carrier concentration is demonstrated and shown to be due to both substrate and environmental effects.
Original languageEnglish
Pages (from-to)1137
Number of pages1141
JournalMaterials Science Forum
Volume778
DOIs
Publication statusPublished - 2014
This open access research output is licenced under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported License.

ID: 27727379