Asymmetry between the electron- and hole-doped Mott transition in the periodic Anderson model. / Sordi, G.; Amaricci, A.; Rozenberg, M. J.

In: Physical Review B, Vol. 80, No. 3, ARTN 035129, 07.2009.

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Abstract

We study the doping-driven Mott metal-insulator transition (MIT) in the periodic Anderson model set in the Mott-Hubbard regime. A striking asymmetry for electron- or hole-driven transitions is found. The electron-doped MIT at larger U is similar to the one found in the single band Hubbard model, with a first-order character due to coexistence of solutions. The hole-doped MIT, in contrast, is second order and can be described as the delocalization of Zhang-Rice singlets.
Original languageEnglish
Article numberARTN 035129
Number of pages15
JournalPhysical Review B
Volume80
Issue number3
DOIs
Publication statusPublished - Jul 2009
This open access research output is licenced under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported License.

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