Asymmetry between the electron- and hole-doped Mott transition in the periodic Anderson model

G. Sordi, A. Amaricci, M. J. Rozenberg

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Abstract

We study the doping-driven Mott metal-insulator transition (MIT) in the periodic Anderson model set in the Mott-Hubbard regime. A striking asymmetry for electron- or hole-driven transitions is found. The electron-doped MIT at larger U is similar to the one found in the single band Hubbard model, with a first-order character due to coexistence of solutions. The hole-doped MIT, in contrast, is second order and can be described as the delocalization of Zhang-Rice singlets.
Original languageEnglish
Article numberARTN 035129
Number of pages15
JournalPhysical Review B
Volume80
Issue number3
DOIs
Publication statusPublished - Jul 2009

Keywords

  • MAGNETIC-IMPURITIES
  • INFINITE DIMENSIONS
  • MEAN-FIELD THEORY
  • FILLED HUBBARD-MODEL
  • COHERENCE
  • PHOTOEMISSION
  • HEAVY FERMIONS
  • METAL-INSULATOR TRANSITIONS
  • LANDAU THEORY
  • FERMION SYSTEMS

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