ZnO tetrapod junction diodes

Marcus Newton; Rais Shaikhaidarov

doi:10.1063/1.3119630

ZnO tetrapod junction diodes

Research output: Contribution to journal › Article › peer-review

Abstract

ZnO nanocrystals hold the potential for use in a wide range of applications particularly in optoelectronics. We report on the fabrication of a highly sensitive p-n junction diode structure based on a single ZnO tetrapod shaped nanocrystal. This device shows a noted response to ultraviolet light with high internal gain. The high reponsivities we have observed exceed 104 A / W and are likely due to impact-ionization effects at the p-n junction interface.

Original language	English
Pages (from-to)	153112
Number of pages	3
Journal	Applied Physics Letters
Volume	94
Issue number	15
DOIs	https://doi.org/10.1063/1.3119630
Publication status	Published - 16 Apr 2009

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10.1063/1.3119630

Cite this

@article{3865594b84d44a0aa1768fd615e22327,

title = "ZnO tetrapod junction diodes",

abstract = "ZnO nanocrystals hold the potential for use in a wide range of applications particularly in optoelectronics. We report on the fabrication of a highly sensitive p-n junction diode structure based on a single ZnO tetrapod shaped nanocrystal. This device shows a noted response to ultraviolet light with high internal gain. The high reponsivities we have observed exceed 104 A / W and are likely due to impact-ionization effects at the p-n junction interface.",

author = "Marcus Newton and Rais Shaikhaidarov",

year = "2009",

month = apr,

day = "16",

doi = "10.1063/1.3119630",

language = "English",

volume = "94",

pages = "153112",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

}

TY - JOUR

T1 - ZnO tetrapod junction diodes

AU - Newton, Marcus

AU - Shaikhaidarov, Rais

PY - 2009/4/16

Y1 - 2009/4/16

N2 - ZnO nanocrystals hold the potential for use in a wide range of applications particularly in optoelectronics. We report on the fabrication of a highly sensitive p-n junction diode structure based on a single ZnO tetrapod shaped nanocrystal. This device shows a noted response to ultraviolet light with high internal gain. The high reponsivities we have observed exceed 104 A / W and are likely due to impact-ionization effects at the p-n junction interface.

AB - ZnO nanocrystals hold the potential for use in a wide range of applications particularly in optoelectronics. We report on the fabrication of a highly sensitive p-n junction diode structure based on a single ZnO tetrapod shaped nanocrystal. This device shows a noted response to ultraviolet light with high internal gain. The high reponsivities we have observed exceed 104 A / W and are likely due to impact-ionization effects at the p-n junction interface.

U2 - 10.1063/1.3119630

DO - 10.1063/1.3119630

M3 - Article

SN - 0003-6951

VL - 94

SP - 153112

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -