High-Mobility Sm-Doped Bi2Se3 Ferromagnetic Topological Insulators and Robust Exchange Coupling

Taishi Chen; Wenqing Liu; Fubao Zheng; Ming Gao; Xingchen Pan; Gerrit  van der Laan; Xuefeng Wang; Qinfang Zhang; Fengqi Song; Baigeng Wang; Baolin Wang; Yongbing Xu; Guanghou Wang; Rong Zhang

doi:10.1002/adma.201501254

High-Mobility Sm-Doped Bi2Se3 Ferromagnetic Topological Insulators and Robust Exchange Coupling

Taishi Chen, Wenqing Liu, Fubao Zheng, Ming Gao, Xingchen Pan, Gerrit van der Laan, Xuefeng Wang, Qinfang Zhang, Fengqi Song, Baigeng Wang, Baolin Wang, Yongbing Xu, Guanghou Wang, Rong Zhang

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Abstract

High-mobility (SmxBi1-x)2Se3 topological insulators (with x = 0.05) show a Curie temperature of about 52 K, and the carrier concentration and Fermi wave vector can be manipulated by intentional Te introduction with no significant influence on the Curie temperature. The origin of the ferromagnetism is attributed to the trivalent Sm dopant, as confirmed by X-ray magnetic circular dichroism and first-principles calculations. The carrier concentration is on the order of 1019 cm−3 and the mobility can reach about 7200 cm2 V−1 s−1 with pronounced Shubnikov–de Haas oscillations.

Original language	English
Pages (from-to)	4823–4829
Number of pages	7
Journal	Advanced Materials
Volume	27
Issue number	33
Early online date	14 Jul 2015
DOIs	https://doi.org/10.1002/adma.201501254
Publication status	Published - 2 Sept 2015

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10.1002/adma.201501254

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http://onlinelibrary.wiley.com/doi/10.1002/adma.201501254/abstract;jsessionid=3C7CE1BA28A2C435C55C2E8D93419EE1.f04t04

Cite this

@article{14ba857f1c934fbf92d89e9716388da2,

title = "High-Mobility Sm-Doped Bi2Se3 Ferromagnetic Topological Insulators and Robust Exchange Coupling",

abstract = "High-mobility (SmxBi1-x)2Se3 topological insulators (with x = 0.05) show a Curie temperature of about 52 K, and the carrier concentration and Fermi wave vector can be manipulated by intentional Te introduction with no significant influence on the Curie temperature. The origin of the ferromagnetism is attributed to the trivalent Sm dopant, as confirmed by X-ray magnetic circular dichroism and first-principles calculations. The carrier concentration is on the order of 1019 cm−3 and the mobility can reach about 7200 cm2 V−1 s−1 with pronounced Shubnikov–de Haas oscillations.",

author = "Taishi Chen and Wenqing Liu and Fubao Zheng and Ming Gao and Xingchen Pan and {van der Laan}, Gerrit and Xuefeng Wang and Qinfang Zhang and Fengqi Song and Baigeng Wang and Baolin Wang and Yongbing Xu and Guanghou Wang and Rong Zhang",

year = "2015",

month = sep,

day = "2",

doi = "10.1002/adma.201501254",

language = "English",

volume = "27",

pages = "4823–4829",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "33",

}

TY - JOUR

T1 - High-Mobility Sm-Doped Bi2Se3 Ferromagnetic Topological Insulators and Robust Exchange Coupling

AU - Chen, Taishi

AU - Liu, Wenqing

AU - Zheng, Fubao

AU - Gao, Ming

AU - Pan, Xingchen

AU - van der Laan, Gerrit

AU - Wang, Xuefeng

AU - Zhang, Qinfang

AU - Song, Fengqi

AU - Wang, Baigeng

AU - Wang, Baolin

AU - Xu, Yongbing

AU - Wang, Guanghou

AU - Zhang, Rong

PY - 2015/9/2

Y1 - 2015/9/2

N2 - High-mobility (SmxBi1-x)2Se3 topological insulators (with x = 0.05) show a Curie temperature of about 52 K, and the carrier concentration and Fermi wave vector can be manipulated by intentional Te introduction with no significant influence on the Curie temperature. The origin of the ferromagnetism is attributed to the trivalent Sm dopant, as confirmed by X-ray magnetic circular dichroism and first-principles calculations. The carrier concentration is on the order of 1019 cm−3 and the mobility can reach about 7200 cm2 V−1 s−1 with pronounced Shubnikov–de Haas oscillations.

AB - High-mobility (SmxBi1-x)2Se3 topological insulators (with x = 0.05) show a Curie temperature of about 52 K, and the carrier concentration and Fermi wave vector can be manipulated by intentional Te introduction with no significant influence on the Curie temperature. The origin of the ferromagnetism is attributed to the trivalent Sm dopant, as confirmed by X-ray magnetic circular dichroism and first-principles calculations. The carrier concentration is on the order of 1019 cm−3 and the mobility can reach about 7200 cm2 V−1 s−1 with pronounced Shubnikov–de Haas oscillations.

U2 - 10.1002/adma.201501254

DO - 10.1002/adma.201501254

M3 - Letter

SN - 0935-9648

VL - 27

SP - 4823

EP - 4829

JO - Advanced Materials

JF - Advanced Materials

IS - 33

ER -