Enhancing Magnetic Ordering in Cr-doped Bi2Se3 using High-TC Ferrimagnetic Insulator

Wenqing Liu; Liang He; koichi Murata; Mehmet C.  Onbasli; Murong Lang; nick Maltby; Shunpu li; Xuefeng Wang; Caroline Ross; Peter bencok; Gerrit  van der Laan; Rong Zhang; Kang Wang

doi:10.1021/nl504480g

Enhancing Magnetic Ordering in Cr-doped Bi2Se3 using High-TC Ferrimagnetic Insulator

Wenqing Liu, Liang He, koichi Murata, Mehmet C. Onbasli, Murong Lang, nick Maltby, Shunpu li, Xuefeng Wang, Caroline Ross, Peter bencok, Gerrit van der Laan, Rong Zhang, Kang Wang

Research output: Contribution to journal › Letter › peer-review

Abstract

We report a study of enhancing the magnetic ordering in a model magnetically doped topological insulator (TI), Bi2–xCrxSe3, via the proximity effect using a high-TC ferrimagnetic insulator Y3Fe5O12. The FMI provides the TI with a source of exchange interaction yet without removing the nontrivial surface state. By performing the elemental specific X-ray magnetic circular dichroism (XMCD) measurements, we have unequivocally observed an enhanced TC of 50 K in this magnetically doped TI/FMI heterostructure. We have also found a larger (6.6 nm at 30 K) but faster decreasing (by 80% from 30 to 50 K) penetration depth compared to that of diluted ferromagnetic semiconductors (DMSs), which could indicate a novel mechanism for the interaction between FMIs and the nontrivial TIs surface.

Original language	English
Pages (from-to)	764–769
Number of pages	6
Journal	Nano Letters
Volume	15
Issue number	1
Early online date	22 Dec 2014
DOIs	https://doi.org/10.1021/nl504480g
Publication status	Published - 14 Jan 2015

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10.1021/nl504480g

http://pubs.acs.org/doi/abs/10.1021/nl504480g

Cite this

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title = "Enhancing Magnetic Ordering in Cr-doped Bi2Se3 using High-TC Ferrimagnetic Insulator",

abstract = "We report a study of enhancing the magnetic ordering in a model magnetically doped topological insulator (TI), Bi2–xCrxSe3, via the proximity effect using a high-TC ferrimagnetic insulator Y3Fe5O12. The FMI provides the TI with a source of exchange interaction yet without removing the nontrivial surface state. By performing the elemental specific X-ray magnetic circular dichroism (XMCD) measurements, we have unequivocally observed an enhanced TC of 50 K in this magnetically doped TI/FMI heterostructure. We have also found a larger (6.6 nm at 30 K) but faster decreasing (by 80% from 30 to 50 K) penetration depth compared to that of diluted ferromagnetic semiconductors (DMSs), which could indicate a novel mechanism for the interaction between FMIs and the nontrivial TIs surface.",

author = "Wenqing Liu and Liang He and koichi Murata and Onbasli, {Mehmet C.} and Murong Lang and nick Maltby and Shunpu li and Xuefeng Wang and Caroline Ross and Peter bencok and {van der Laan}, Gerrit and Rong Zhang and Kang Wang",

year = "2015",

month = jan,

day = "14",

doi = "10.1021/nl504480g",

language = "English",

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TY - JOUR

T1 - Enhancing Magnetic Ordering in Cr-doped Bi2Se3 using High-TC Ferrimagnetic Insulator

AU - Liu, Wenqing

AU - He, Liang

AU - Murata, koichi

AU - Onbasli, Mehmet C.

AU - Lang, Murong

AU - Maltby, nick

AU - li, Shunpu

AU - Wang, Xuefeng

AU - Ross, Caroline

AU - bencok, Peter

AU - van der Laan, Gerrit

AU - Zhang, Rong

AU - Wang, Kang

PY - 2015/1/14

Y1 - 2015/1/14

N2 - We report a study of enhancing the magnetic ordering in a model magnetically doped topological insulator (TI), Bi2–xCrxSe3, via the proximity effect using a high-TC ferrimagnetic insulator Y3Fe5O12. The FMI provides the TI with a source of exchange interaction yet without removing the nontrivial surface state. By performing the elemental specific X-ray magnetic circular dichroism (XMCD) measurements, we have unequivocally observed an enhanced TC of 50 K in this magnetically doped TI/FMI heterostructure. We have also found a larger (6.6 nm at 30 K) but faster decreasing (by 80% from 30 to 50 K) penetration depth compared to that of diluted ferromagnetic semiconductors (DMSs), which could indicate a novel mechanism for the interaction between FMIs and the nontrivial TIs surface.

AB - We report a study of enhancing the magnetic ordering in a model magnetically doped topological insulator (TI), Bi2–xCrxSe3, via the proximity effect using a high-TC ferrimagnetic insulator Y3Fe5O12. The FMI provides the TI with a source of exchange interaction yet without removing the nontrivial surface state. By performing the elemental specific X-ray magnetic circular dichroism (XMCD) measurements, we have unequivocally observed an enhanced TC of 50 K in this magnetically doped TI/FMI heterostructure. We have also found a larger (6.6 nm at 30 K) but faster decreasing (by 80% from 30 to 50 K) penetration depth compared to that of diluted ferromagnetic semiconductors (DMSs), which could indicate a novel mechanism for the interaction between FMIs and the nontrivial TIs surface.

U2 - 10.1021/nl504480g

DO - 10.1021/nl504480g

M3 - Letter

SN - 1530-6984

VL - 15

SP - 764

EP - 769

JO - Nano Letters

JF - Nano Letters

IS - 1

ER -