Controlling the carrier concentration of epitaxial graphene by ultraviolet illumination

Viktoria Eless; Ruth  Pearce; Rositza  Yakimova

doi:10.4028/www.scientific.net/MSF.778-780.1137

Controlling the carrier concentration of epitaxial graphene by ultraviolet illumination

Viktoria Eless, Ruth Pearce, Rositza Yakimova

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Silicon carbide (SiC) is a well-known material for UV detection however the effect of UV illumination on the electron donation between the substrate, interfacial (or buffer layer) and graphene is not well understood. The effect of ultraviolet (UV) illumination on the carrier concentration of an epitaxial graphene Hall bar device is investigated by scanning Kelvin probe microscopy (SKPM) and transport measurements in ambient and vacuum conditions. Modulation of the carrier concentration is demonstrated and shown to be due to both substrate and environmental effects.

Original language	English
Pages (from-to)	1137
Number of pages	1141
Journal	Materials Science Forum
Volume	778
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.778-780.1137
Publication status	Published - 2014

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10.4028/www.scientific.net/MSF.778-780.1137

Cite this

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title = "Controlling the carrier concentration of epitaxial graphene by ultraviolet illumination",

abstract = "Silicon carbide (SiC) is a well-known material for UV detection however the effect of UV illumination on the electron donation between the substrate, interfacial (or buffer layer) and graphene is not well understood. The effect of ultraviolet (UV) illumination on the carrier concentration of an epitaxial graphene Hall bar device is investigated by scanning Kelvin probe microscopy (SKPM) and transport measurements in ambient and vacuum conditions. Modulation of the carrier concentration is demonstrated and shown to be due to both substrate and environmental effects.",

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AU - Pearce, Ruth

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AB - Silicon carbide (SiC) is a well-known material for UV detection however the effect of UV illumination on the electron donation between the substrate, interfacial (or buffer layer) and graphene is not well understood. The effect of ultraviolet (UV) illumination on the carrier concentration of an epitaxial graphene Hall bar device is investigated by scanning Kelvin probe microscopy (SKPM) and transport measurements in ambient and vacuum conditions. Modulation of the carrier concentration is demonstrated and shown to be due to both substrate and environmental effects.

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