Abstract
We have performed an angle-resolved photoemission spectroscopy study of SrVO3 thin films. Utilizing thin films prepared in situ, with well-defined and atomically flat surfaces, contributions from surface states centered at ∼−1.5 eV were dramatically reduced, enabling us to study the bulklike V 3d states, including the incoherent part. A clear band dispersion is observed not only in the coherent part but also in the incoherent part and the spectral weight of the incoherent part is larger within the Fermi volume. These findings are particularly significant since the description of the so-called incoherent Hubbard band in SrVO3 needs to include the nonlocal interaction between the atoms. These trends are well reproduced by dynamical mean-field theory calculations.
Original language | English |
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Article number | ARTN 235104 |
Number of pages | 4 |
Journal | Physical Review B |
Volume | 80 |
Issue number | 23 |
DOIs | |
Publication status | Published - Dec 2009 |
Keywords
- SYSTEMS
- Hubbard model
- SPECTRAL-FUNCTION
- electronic structure
- pulsed laser deposition
- thin films
- photoelectron spectra
- CA1-XSRXVO3
- strontium compounds
- metal-insulator transition
- surface states
- TRANSITION-METAL OXIDES